FDS6990AS
Manufacturer:
On Semiconductor
Mfr.Part #:
FDS6990AS
Datasheet:
Description:
MOSFETs SOIC-8 SMD/SMT N-Channel number of channels:2 2 W 30 V Continuous Drain Current (ID):7.5 A 14 nC
| Parameter | Value |
|---|---|
| Length | 5 mm |
| Width | 4 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 8 |
| Resistance | 22 MΩ |
| Height | 1.5 mm |
| Packaging | Reel |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Number of Elements | 2 |
| Lifecycle Status | Production (Last Updated: 2 months ago) |
| Max Power Dissipation | 900 mW |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.7 V |
| Number of Channels | 2 |
| Input capacitance | 550 pF |
| Continuous Drain Current (ID) | 7.5 A |
| Rds On Max | 22 mΩ |
| Drain to Source Voltage (Vdss) | 30 V |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 14 ns |
| Element Configuration | Dual |
| Fall Time | 8 ns |
| Rise Time | 8 ns |
| Dual Supply Voltage | 30 V |
| Gate Charge | 14 nC |
| Drain to Source Resistance | 17 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | 1.7 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Drain to Source Breakdown Voltage (Vds) | 30 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 2 months ago) |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | N-Channel |
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